Title:
PHOTODETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/085018
Kind Code:
A1
Abstract:
A first photodetection element (10) according to one embodiment of the present disclosure comprises a first electrode (11), a second electrode (13) that is arranged opposite the first electrode (11), and a photoelectric conversion layer (12) that is arranged between the first electrode (11) and the second electrode (13), includes fluorine and binary semiconductor nanoparticles that include indium, and has an indium/fluorine atom count ratio of 100–150.
Inventors:
OKABE YUTA (JP)
TAKIZAWA SYUUITI (JP)
ENOKI OSAMU (JP)
MURATA MASAKI (JP)
HIRANO YOSHIYUKI (JP)
TAKIZAWA SYUUITI (JP)
ENOKI OSAMU (JP)
MURATA MASAKI (JP)
HIRANO YOSHIYUKI (JP)
Application Number:
PCT/JP2023/036709
Publication Date:
April 25, 2024
Filing Date:
October 10, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L31/08; H01L27/146; H10K39/32
Foreign References:
| US20180016495A1 | 2018-01-18 | |||
| JP2019133963A | 2019-08-08 | |||
| US20150060773A1 | 2015-03-05 | |||
| JP2022111068A | 2022-07-29 | |||
| JP2021166242A | 2021-10-14 | |||
| CN111081812A | 2020-04-28 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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