Title:
PLASMA ETCHING METHOD USING HEPTAFLUOROPROPYL METHYL ETHER AND HEPTAFLUOROISOPROPYL METHYL ETHER
Document Type and Number:
WIPO Patent Application WO/2024/029776
Kind Code:
A1
Abstract:
Disclosed is a plasma etching method. The plasma etching method may comprise: a first step for vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid heptafluoroisopropyl methyl ether (HFE-347mmy); a second step for supplying a mixed gas containing the vaporized heptafluoropropyl methyl ether and the heptafluoroisopropyl methyl ether and a discharge gas containing argon gas to a plasma chamber in which an etching target is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma etch the etching target.
Inventors:
KIM CHANG-KOO (KR)
YOU SANG HYUN (KR)
LEE YU JONG (KR)
YOU SANG HYUN (KR)
LEE YU JONG (KR)
Application Number:
PCT/KR2023/009992
Publication Date:
February 08, 2024
Filing Date:
July 13, 2023
Export Citation:
Assignee:
UNIV AJOU IND ACADEMIC COOP FOUND (KR)
International Classes:
H01L21/311; C09K13/00; H01L21/67
Foreign References:
| KR20220065365A | 2022-05-20 | |||
| KR20170076737A | 2017-07-04 | |||
| KR20210022257A | 2021-03-03 | |||
| KR20200018897A | 2020-02-21 | |||
| KR20210123826A | 2021-10-14 |
Attorney, Agent or Firm:
NAM, Gun Pil et al. (KR)
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