Title:
MEMORY CELL, 3D MEMORY AND PREPARATION METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/082394
Kind Code:
A1
Abstract:
A memory cell, a 3D memory and a preparation method therefor, and an electronic device, which relate to the technical field of semiconductors. The memory cell comprises a first transistor and a second transistor, which are arranged on a substrate (1). The first transistor comprises a first gate electrode (11), a first electrode (33), a second electrode (34) and a first semiconductor layer (6), which are arranged on the substrate. The second transistor comprises a third electrode (51), a fourth electrode (52), a second gate electrode (12) extending in a direction perpendicular to the substrate (1), and a second semiconductor layer (9) surrounding the sidewall of the second gate electrode (12), which are arranged on the substrate (1), wherein the second semiconductor layer (9) comprises a second source contact region (91) and a second drain contact region (92), which are arranged spaced apart from each other, and a channel between the second source contact region (91) and the second drain contact region (92) is a horizontal channel.
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Inventors:
DAI JIN (CN)
YU YONG (CN)
LIANG JING (CN)
YU YONG (CN)
LIANG JING (CN)
Application Number:
PCT/CN2022/137319
Publication Date:
April 25, 2024
Filing Date:
December 07, 2022
Export Citation:
Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H10B12/00
Foreign References:
| CN114864583A | 2022-08-05 | |||
| CN115020480A | 2022-09-06 | |||
| CN115346987A | 2022-11-15 | |||
| US20080310213A1 | 2008-12-18 | |||
| CN202211269945A | 2022-10-18 |
Attorney, Agent or Firm:
AFD CHINA INTELLECTUAL PROPERTY LAW OFFICE (CN)
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