Title:
LOCAL VDD AND VSS POWER SUPPLY THROUGH DUMMY GATES WITH GATE TIE-DOWNS AND ASSOCIATED BENEFITS
Document Type and Number:
WIPO Patent Application WO/2024/082733
Kind Code:
A1
Abstract:
An integrated circuit structure includes a power supply rail formed in a backside of a semiconductor wafer. The integrated circuit structure also includes a frontside BEOL wire layer connected to the power supply rail through a gate, wherein the gate is of a type to be powered off by a power supply coupled through the gate from the power supply rail to the first frontside BEOL wire layer. A method of forming an integrated circuit structure includes forming a power supply rail in a backside of a semiconductor wafer, forming a gate in the semiconductor wafer, and forming a frontside BEOL wire layer connected to the power supply rail through the gate. Again, the gate is of a type to be powered off by a power supply coupled through the gate from the power supply rail to the first frontside BEOL wire layer.
Inventors:
XIE RUILONG (US)
LANZILLO NICHOLAS ANTHONY (US)
CLEVENGER LAWRENCE A (US)
SHOBHA HOSADURGA (US)
HUANG HUAI (US)
LANZILLO NICHOLAS ANTHONY (US)
CLEVENGER LAWRENCE A (US)
SHOBHA HOSADURGA (US)
HUANG HUAI (US)
Application Number:
PCT/CN2023/108135
Publication Date:
April 25, 2024
Filing Date:
July 19, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L23/528
Foreign References:
| US20210358891A1 | 2021-11-18 | |||
| US20210066489A1 | 2021-03-04 | |||
| US10192819B1 | 2019-01-29 | |||
| US20220238388A1 | 2022-07-28 | |||
| US20190244955A1 | 2019-08-08 | |||
| CN113948572A | 2022-01-18 |
Attorney, Agent or Firm:
CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)
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