Title:
DIRECT BACKSIDE SELF-ALIGNED CONTACT
Document Type and Number:
WIPO Patent Application WO/2024/082734
Kind Code:
A1
Abstract:
A semiconductor structure is provided including a backside source/drain contact structure that contacts a source/drain region of a transistor and overlaps a portion of a tri-layered bottom dielectric isolation structure that is located on a backside of the transistor. The presence of the tri-layered bottom dielectric isolation structure prevents shorting between the gate structure of the transistor and the backside source/drain contact structure, and thus improves process margin.
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Inventors:
XIE RUILONG (US)
FROUGIER JULIEN (US)
ZHANG CHEN (US)
SUNG MIN GYU (US)
WU HENG (US)
FROUGIER JULIEN (US)
ZHANG CHEN (US)
SUNG MIN GYU (US)
WU HENG (US)
Application Number:
PCT/CN2023/108138
Publication Date:
April 25, 2024
Filing Date:
July 19, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L29/78; H01L21/768; H01L23/535
Domestic Patent References:
| WO1999052137A1 | 1999-10-14 |
Foreign References:
| US20220310638A1 | 2022-09-29 | |||
| US20210335783A1 | 2021-10-28 | |||
| US20210104440A1 | 2021-04-08 | |||
| CN112750824A | 2021-05-04 | |||
| US20120133024A1 | 2012-05-31 |
Attorney, Agent or Firm:
CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)
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