Title:
FIELD EMISSION ELECTRON SOURCE, METHOD OF PRODUCING SAME, AND ELECTRON BEAM DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2023/248271
Kind Code:
A1
Abstract:
The present invention: improves the ratio of an emission angle current density to the total current of a field emission electron source in which a (100) plane of hexaboride single crystal or transition metal carbide single crystal is used as an electron emission surface; and improves current stability. Formed at a distal end of a tip of hexaboride single crystal or transition metal carbide single crystal of a <100> axis constituting an electron source is a top facet of a first (100) plane, surrounded by such side facets as to be constituted of at least four {n11} planes and at least four {n10} planes where n = an integer 1, 2, or 3, the total surface area of the side facets of the {n11} planes being > than the total surface area of the {n10} side facets. Furthermore formed is a microcrystal having a top facet of a second (100) plane, inside the top facet plane of the first (100) plane. Electrons are mainly emitted from the top facet of the second (100) plane.
Inventors:
KUSUNOKI TOSHIAKI (JP)
HASHIZUME TOMIHIRO (JP)
ARAI NORIAKI (JP)
FUKUTA MASAHIRO (JP)
HASHIZUME TOMIHIRO (JP)
ARAI NORIAKI (JP)
FUKUTA MASAHIRO (JP)
Application Number:
PCT/JP2022/024469
Publication Date:
December 28, 2023
Filing Date:
June 20, 2022
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01J37/073; H01J1/304; H01J9/02
Domestic Patent References:
| WO2022064557A1 | 2022-03-31 |
Foreign References:
| JP2008177017A | 2008-07-31 | |||
| JP2010251087A | 2010-11-04 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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