Title:
CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT
Document Type and Number:
WIPO Patent Application WO/2024/085293
Kind Code:
A1
Abstract:
The present invention relates to a photoresist composition that can be exposed with a light source having a wavelength of 248 nm, and to a chemically-amplified positive photoresist composition for pattern profile improvement and etch resistance enhancement, containing a phenolic polymer resin comprising a hydroxyl group, represented by chemical formula 4, in which one from among compounds represented by chemical formula 1 to chemical formula 3 is selected as an effectively-etch-resistant monomer and copolymerized. The present invention exhibits excellent etch resistance while a profile, which is more vertical than a conventional positive photoresist, is implemented.
Inventors:
CHOI YOUNG CHEOL (KR)
LEE SU JIN (KR)
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
LEE SU JIN (KR)
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
Application Number:
PCT/KR2022/016247
Publication Date:
April 25, 2024
Filing Date:
October 24, 2022
Export Citation:
Assignee:
YOUNG CHANG CHEMICAL CO LTD (KR)
International Classes:
G03F7/004; C08F212/14; C08F212/32; G03F7/039; G03F7/20
Attorney, Agent or Firm:
HAEDAM IP GROUP (KR)
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