Title:
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SAME, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/095743
Kind Code:
A1
Abstract:
The present disclosure relates to a solid-state imaging device, a manufacturing method of same, and an electronic apparatus which make it possible to achieve both pixel miniaturization and memory unit formation. A solid-state imaging device comprises: a first semiconductor substrate on which a photoelectric conversion unit is provided in each pixel; a second semiconductor substrate on which an amplification transistor, which amplifies pixel signals, is provided; and an insulation layer disposed between the first semiconductor substrate and the second semiconductor substrate. The insulation layer includes a second transmission gate which transmits charges, which have been transmitted from the photoelectric conversion unit by a first transmission gate, to a charge-voltage conversion unit. The present disclosure can be applied to, for example, a solid-state imaging device or the like which performs a global shutter operation.
Inventors:
KODAMA KOMOMO (JP)
SATO YUSUKE (JP)
NAKATA TATSUYA (JP)
SATO YUSUKE (JP)
NAKATA TATSUYA (JP)
Application Number:
PCT/JP2023/037325
Publication Date:
May 10, 2024
Filing Date:
October 16, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H04N25/70
Domestic Patent References:
WO2021186908A1 | 2021-09-23 | |||
WO2018180574A1 | 2018-10-04 | |||
WO2020262629A1 | 2020-12-30 | |||
WO2014141898A1 | 2014-09-18 | |||
WO2017183477A1 | 2017-10-26 |
Foreign References:
JP2021082897A | 2021-05-27 | |||
JP2010219339A | 2010-09-30 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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