Title:
SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/082358
Kind Code:
A1
Abstract:
The present disclosure relates to the field of semiconductors, and provides a semiconductor structure manufacturing method, and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a dielectric layer and a metal layer to form a dielectric-metal composite structure, at least one opening being formed in the dielectric layer, and the metal layer filling the opening and covering the surface of the dielectric layer; providing an abrasive mixed solution, the abrasive mixed solution comprising positively charged abrasive particles; and performing chemical mechanical polishing treatment on the dielectric-metal composite structure by using the abrasive mixed solution to expose the upper surface of the dielectric layer and enable the upper surface of the dielectric layer to be not higher than the upper surface of the metal layer.
Inventors:
TSAI SHENG-YING (CN)
Application Number:
PCT/CN2022/130952
Publication Date:
April 25, 2024
Filing Date:
November 09, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/304; B24B37/00
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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