Title:
YTTRIUM-FLUORIDE-BASED SPRAYED FILM, SPRAYING MEMBER, AND METHOD FOR PRODUCING YTTRIUM-FLUORIDE-BASED SPRAYED FILM
Document Type and Number:
WIPO Patent Application WO/2021/124996
Kind Code:
A1
Abstract:
According to the present invention, a yttrium-fluoride-based sprayed film that has a Vickers hardness of 350 or higher, includes a YF3 crystal phase having an orthorhombic crystal system, and does not include a YF3 crystal phase having a crystal system other than an orthorhombic crystal system is produced by plasma-spraying a spray powder that includes a YF3 crystal phase having an orthorhombic crystal system and does not include a YF3 crystal phase having a crystal system other than an orthorhombic crystal system. In the present invention, it is possible to provide a yttrium-fluoride-based sprayed film that has a high film hardness and is such that the amount of particles generated upon exposure to a halogen-based gas plasma is low, and such a sprayed film is exceptional as a sprayed film formed on a member for a semiconductor-producing device that is used in a semiconductor production step. Additionally, according to the present invention, it is possible to efficiently produce such a yttrium-fluoride-based sprayed film.
Inventors:
IWASAKI RYO (JP)
HAMAYA NORIAKI (JP)
TANIGUCHI YUGO (JP)
HAMAYA NORIAKI (JP)
TANIGUCHI YUGO (JP)
Application Number:
PCT/JP2020/045770
Publication Date:
June 24, 2021
Filing Date:
December 09, 2020
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C23C4/04; C01F17/00; C23C4/134
Domestic Patent References:
| WO2018052128A1 | 2018-03-22 |
Foreign References:
| JP2017190475A | 2017-10-19 | |||
| JP2018053356A | 2018-04-05 |
Attorney, Agent or Firm:
PATENT PROFESSIONAL CORPORATION EI-MEI PATENT OFFICE (JP)
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