Title:
WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/106016
Kind Code:
A1
Abstract:
Provided is a wafer manufacturing method for obtaining a wafer from an ingot (2) having a c-axis provided in a state in which a center axis (L) is tilted in an off-angle direction (Dθ) by an off-angle greater than 0 degree, the method comprising the following procedure, steps, or processes. A surface (21) on one end side of the ingot in a height direction thereof is irradiated with a laser beam having a penetrating property, to form a delamination layer (25) at a depth corresponding to the thickness of the wafer from the surface. A load is applied in one direction at one end (23) of the ingot in the off-angle direction, to delaminate a wafer precursor (26), which is a portion of the ingot between the surface and the delamination layer, from the ingot at the delamination layer. A major surface of a planar delaminated body obtained by delaminating the wafer precursor from the ingot is planarized to obtain a wafer.
Inventors:
YASUDA KOICHIRO (JP)
TAKAGI RYOTA (JP)
KAWAZU TOMOKI (JP)
NOMURA SODAI (JP)
SHIRAI HIDEAKI (JP)
SOLTANI BAHMAN (JP)
SOBAJIMA SHUNSUKE (JP)
TAKAGI RYOTA (JP)
KAWAZU TOMOKI (JP)
NOMURA SODAI (JP)
SHIRAI HIDEAKI (JP)
SOLTANI BAHMAN (JP)
SOBAJIMA SHUNSUKE (JP)
Application Number:
PCT/JP2022/041569
Publication Date:
June 15, 2023
Filing Date:
November 08, 2022
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L21/304; B23K26/53; B24B7/22; B28D5/04
Foreign References:
| JP2017220631A | 2017-12-14 | |||
| JP2011249449A | 2011-12-08 | |||
| JP2017216424A | 2017-12-07 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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