Title:
VERTICAL PHASE CHANGE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/037524
Kind Code:
A1
Abstract:
Embodiments of present invention provide a phase change memory (PCM) device. The PCM device includes a first PCM cell with the first PCM cell including an L-shaped phase change element, the L-shaped phase change element having a horizontal portion and a vertical portion on top of the horizontal portion; a selector underneath the horizontal portion of the L-shaped phase change element; a top electrode in contact with a top surface of the vertical portion of the L-shaped phase change element; and a bottom electrode in contact with the selector; and a second PCM cell. A method of manufacturing the PCM device is also provided.
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Inventors:
CHENG KANGGUO (US)
LI JUNTAO (US)
RADENS CARL (US)
XIE RUILONG (US)
LI JUNTAO (US)
RADENS CARL (US)
XIE RUILONG (US)
Application Number:
PCT/CN2023/113050
Publication Date:
February 22, 2024
Filing Date:
August 15, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L21/82; G11C11/00
Foreign References:
| US20130058152A1 | 2013-03-07 | |||
| US10763307B1 | 2020-09-01 | |||
| CN102934229A | 2013-02-13 | |||
| US20130058158A1 | 2013-03-07 | |||
| US20080035961A1 | 2008-02-14 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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