Title:
TUNNEL MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND BUILT-IN MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/092817
Kind Code:
A1
Abstract:
Provided is a TMR element, comprising a magnetic tunnel junction portion, a side wall portion provided on the side surface of the magnetic tunnel junction portion, a cap layer covering the top surface of the magnetic tunnel junction portion and the surface of side wall portion, and an upper electrode layer provided on the cap layer, wherein the cap layer has an upper surface and a lower surface, the upper surface has a protruding shape that protrudes in a direction away from the magnetic tunnel junction portion in a first region located right above the top surface of the magnetic tunnel junction portion, the upper surface has a depression recessed in a direction toward the side wall portion in a second region located right above the surface of the side wall portion, the lower surface has a portion in which the height of the lower surface is higher in the second region than in the first region, the height of the upper surface in the first region is greater than the height of the lower surface in the second region, and the cap layer includes a migration preventing layer.
Inventors:
TANG ZHENYAO (JP)
SASAKI TOMOYUKI (JP)
SASAKI TOMOYUKI (JP)
Application Number:
PCT/JP2017/040294
Publication Date:
May 16, 2019
Filing Date:
November 08, 2017
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L43/08; H01L43/10
Foreign References:
| JP2008181580A | 2008-08-07 | |||
| JP2017183560A | 2017-10-05 | |||
| JP2017084916A | 2017-05-18 | |||
| JP2011170955A | 2011-09-01 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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