Title:
TRANSISTOR AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/079585
Kind Code:
A1
Abstract:
Provided is a storage device which allows for miniaturization and high integration. This transistor comprises: a first electric conductor having a columnar region; a first insulator having a cylindrical first region; a second electric conductor having an opening through which the first electric conductor passes; a first semiconductor which is located on the second electric conductor and which has a cylindrical second region; and a third electric conductor on the first semiconductor. The first region of the first insulator surrounds the columnar region of the first electric conductor, the first electric conductor has a third region positioned above the opening of the second electric conductor, and the first electric conductor is surrounded, in the third region, by the second region of the first semiconductor with the first region of the first insulator therebetween.
Inventors:
MIYAIRI HIDEKAZU (JP)
EGI YUJI (JP)
EGI YUJI (JP)
Application Number:
PCT/IB2023/060029
Publication Date:
April 18, 2024
Filing Date:
October 06, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H10B12/00
Foreign References:
| US20220189957A1 | 2022-06-16 | |||
| JP2016149552A | 2016-08-18 |
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