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Patent Searching and Data


Title:
TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/075093
Kind Code:
A1
Abstract:
The present invention relates to a transistor, and a method for manufacturing a transistor comprises the steps of: disposing a substrate having an epitaxial layer thereon; forming an insulating layer so as to expose a portion of the epitaxial layer; forming a plug penetrating a partial region exposed from the insulating layer in the epitaxial layer; forming a conductive layer on top of the plug and the exposed epitaxial layer; forming a via hole in the substrate so as to expose a lower surface of the plug; and forming a metal layer covering a lower portion of the substrate.

Inventors:
LEE SANG MIN (KR)
Application Number:
PCT/KR2022/010761
Publication Date:
May 04, 2023
Filing Date:
July 29, 2022
Export Citation:
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Assignee:
WAVICE INC (KR)
International Classes:
H01L29/66; H01L21/768; H01L29/778
Foreign References:
US20090001478A12009-01-01
KR20170048125A2017-05-08
US20080073752A12008-03-27
US20130146946A12013-06-13
Other References:
KWON HO-SANG, CHOI GIL-WONG, LEE SANG-MIN, KIM DONG-WOOK: "S-Band 300-W GaN HEMT Internally Matched Power Amplifier", THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE - JOURNAL OF KIEES, THE KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, KOREA, vol. 31, no. 1, 1 January 2020 (2020-01-01), Korea , pages 43 - 50, XP093061020, ISSN: 1226-3133, DOI: 10.5515/KJKIEES.2020.31.1.43
Attorney, Agent or Firm:
YOON, Chang Hwan (KR)
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