Title:
THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, AND CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2023/216124
Kind Code:
A1
Abstract:
Provided in the present disclosure is a thin film transistor, comprising: a substrate; a gate electrode; an active layer, which comprises a first active pattern and a second active pattern, wherein the first active pattern comprises a first active sub-pattern, the first active sub-pattern comprises a first active region and a first source-drain contact region, the first source-drain contact region is connected to the second active pattern by means of the first active region, the material of the first active pattern comprises at least one of a metal oxide semiconductor, low-temperature polycrystalline silicon and amorphous silicon, and the material of the second active pattern comprises a semiconductive carbon nanotube; a source electrode and a drain electrode, which are arranged spaced apart from each other and are respectively connected to the active layer; and a passivation layer, which is located at the side of the second active pattern that is away from the substrate. Further provided in the embodiments of the present disclosure are a preparation method for a thin film transistor, and a circuit.
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Inventors:
GUO WEI (CN)
MENG HU (CN)
MENG HU (CN)
Application Number:
PCT/CN2022/092111
Publication Date:
November 16, 2023
Filing Date:
May 11, 2022
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
BEIJING BOE TECHNOLOGY DEV CO LTD (CN)
BEIJING BOE TECHNOLOGY DEV CO LTD (CN)
International Classes:
H01L29/786; H01L21/336; H01L27/12; H01L29/12
Foreign References:
| CN107634102A | 2018-01-26 | |||
| CN111063731A | 2020-04-24 | |||
| CN111081639A | 2020-04-28 | |||
| CN105280717A | 2016-01-27 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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