Title:
THIN-FILM TRANSISTOR AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/029437
Kind Code:
A1
Abstract:
This thin-film transistor comprises: a substrate; a metal oxide layer provided on the substrate; an oxide semiconductor layer that is provided in contact with the metal oxide layer and that contains a plurality of crystal grains; a gate electrode provided on the oxide semiconductor layer; and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. The plurality of crystal grains include a crystal boundary in which the crystal orientation difference between two adjacent measurement points obtained by EBSD (electron beam backscatter diffraction) method exceeds 5°, and the average value of KAM values calculated using the EBSD method is 1.4° or greater.
Inventors:
WATAKABE HAJIME (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
SASAKI DAICHI (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
SASAKI DAICHI (JP)
Application Number:
PCT/JP2023/027496
Publication Date:
February 08, 2024
Filing Date:
July 27, 2023
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
IDEMITSU KOSAN CO (JP)
IDEMITSU KOSAN CO (JP)
International Classes:
H01L29/786; H01L21/20; H01L21/336; H01L21/363
Domestic Patent References:
| WO2018143073A1 | 2018-08-09 |
Foreign References:
| JP2012253315A | 2012-12-20 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
Download PDF:
Previous Patent: METAL AND ELECTRONIC DEVICE
Next Patent: OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, AND ELECTRONIC DEVICE
Next Patent: OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, AND ELECTRONIC DEVICE