Title:
THIN FILM DEPOSITION METHOD AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/272951
Kind Code:
A1
Abstract:
Disclosed in the present application are a thin film deposition method and a semiconductor device. The thin film deposition method of the present application comprises: providing a substrate; depositing a thin film on the substrate by using a thin film deposition technique to form a first deposition layer; introducing a purge gas to remove impurities from the first deposition layer so as to form a purified deposition layer; and forming a thin film layer from the purified deposition layer. By means of the thin film deposition method of the present application, the deposition layer is formed by using the thin film deposition technique, and is subjected to impurity treatment, such that the impurity content of the formed thin film layer is greatly reduced. The surface of a grid electrode is covered with the thin film layer to prepare a semiconductor device, such that the grid electrode can be better protected, and the service life of the semiconductor device can be significantly prolonged.
Inventors:
YANG MENGMENG (CN)
WANG XIAOLING (CN)
WANG XIAOLING (CN)
Application Number:
PCT/CN2021/118694
Publication Date:
January 05, 2023
Filing Date:
September 16, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
C23C16/44; H01L21/28; C23C16/455; C23C16/50; H01L29/51
Domestic Patent References:
| WO2021059486A1 | 2021-04-01 |
Foreign References:
| JP2005310927A | 2005-11-04 | |||
| TW201539574A | 2015-10-16 | |||
| CN105789028A | 2016-07-20 | |||
| US20130171838A1 | 2013-07-04 | |||
| CN111719133A | 2020-09-29 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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