Title:
SURFACE TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/132130
Kind Code:
A1
Abstract:
This surface treatment device (10) is for forming a film on a surface of a material to be treated (W) in a chamber (20), said device comprising: an HCD electrode (210) (electrode) (or a sputtering electrode (220) (electrode)), which is arranged to face the material to be treated (W) and supplies a reactive gas (or emits target particles) to the material to be treated (W); gas supply piping (90) which is disposed along the outer periphery of the electrode and supplies a film formation gas, or an inert gas or the reactive gas for sputtering, to the electrode surface of the electrode, the piping having multiple gas jetting ports (91) arranged along the longitudinal direction of the piping and; and an exhaust device (51) (gas discharge part) for discharging residual gas after the film formation is ended; wherein the multiple gas jetting ports (91) are arranged such that the gas supplied from the gas supply piping (90) is evenly distributed over the electrode surface of the electrode.
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Inventors:
SUEKI RINTARO (JP)
FUKADA KAZUHIRO (JP)
NAMBA TAKESHI (JP)
FUKADA KAZUHIRO (JP)
NAMBA TAKESHI (JP)
Application Number:
PCT/JP2022/042236
Publication Date:
July 13, 2023
Filing Date:
November 14, 2022
Export Citation:
Assignee:
SHIBAURA MACHINE CO LTD (JP)
International Classes:
C23C14/34; C23C14/54; C23C16/455; C23C16/503
Foreign References:
| JP2012114200A | 2012-06-14 | |||
| JP2010090458A | 2010-04-22 | |||
| JP2003297818A | 2003-10-17 | |||
| JPS644473A | 1989-01-09 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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