Title:
SUPER-JUNCTION LDMOS DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2024/061038
Kind Code:
A1
Abstract:
A super-junction LDMOS device and a method for manufacturing same. A super-junction LDMOS device (100) comprises: a substrate (20); an epitaxial layer (21), which covers the surface of one side of the substrate (20); a body region (28) and a drift region (26), which are formed in the epitaxial layer (21), wherein the drift region (26) comprises an N-type pillar region (26_1) and a P-type pillar region (26_2), at least the N-type pillar region (26_1) being adjacent to the body region (28); and a channel accumulation region (210), which is formed in the part of a channel that is adjacent to the N-type pillar region (26_1), wherein the doping concentration of the channel accumulation region (210) ranges from 5E17/cm3 to 5E18/cm3, and a passage for guiding electrons on the surface of the channel to flow to the substrate (20) is formed. When an electron inversion layer is formed on the surface of the channel, the channel accumulation region (210) can form a very wide electron passage, so as to guide electrons to flow in the direction where the substrate (20) is located, thus avoiding a coincidence between a peak electric field and a current path of a traditional device at a position where a gate electrode is close to the edge of the drift region, thereby reducing the impact ionization intensity during static bias, and thus lowering a hot carrier injection effect. In the super-junction LDMOS device (100), the electric-field intensity of a pillar region can also be planarized by means of providing a field plate.
Inventors:
MO HAIFENG (CN)
Application Number:
PCT/CN2023/117931
Publication Date:
March 28, 2024
Filing Date:
September 11, 2023
Export Citation:
Assignee:
SUZHOU WATECH ELECTRONICS CO LTD (CN)
International Classes:
H01L29/06; H01L21/336; H01L29/423; H01L29/78
Foreign References:
| CN111312804A | 2020-06-19 | |||
| CN106486481A | 2017-03-08 | |||
| US20180097108A1 | 2018-04-05 | |||
| CN103367445A | 2013-10-23 | |||
| US20060220120A1 | 2006-10-05 | |||
| US20110089490A1 | 2011-04-21 |
Attorney, Agent or Firm:
CHINA PATENT AGENT (H.K.) LTD. (CN)
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