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Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/243410
Kind Code:
A1
Abstract:
The present invention provides a substrate processing method and a substrate processing system, each of which ameliorates line-edge roughness of a pattern that is formed in a base film in cases where the base film is etched using a metal oxide resist film as a mask.　The present invention provides a substrate processing method which comprises: a step in which a metal oxide resist film is formed on a substrate that has a base film; a step in which a pattern is formed in the metal oxide resist film; a step in which the patterned metal oxide resist film is modified; and a step in which the base film is etched using the modified metal oxide resist film as a mask.

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Inventors:
IGETA MASANOBU (JP)
TAKAHASHI YUTAKA (JP)
TAMURA TATSUYA (JP)
SUZUKI YUSUKE (US)
KAMADA TOYOHIRO (US)
OYAMA KENICHI (US)
TSUZUKI REIKO (JP)
NAGAHARA SEIJI (JP)
MURAMATSU MAKOTO (JP)
MURAMATSU SATORU (JP)
SHIMURA SATORU (JP)
Application Number:
PCT/JP2023/020329
Publication Date:
December 21, 2023
Filing Date:
May 31, 2023
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Domestic Patent References:
WO2021146138A12021-07-22
Foreign References:
US20130256265A12013-10-03
US20200133131A12020-04-30
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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