Title:
SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/162327
Kind Code:
A1
Abstract:
Provided are a Cu-Al binary alloy sputtering target having a high Al content and a method for producing the same, which make it possible to suppress cracking of a sputtering target. The present invention provides a sputtering target composed of a sintered body containing a binary alloy of Cu and Al, with the balance consisting of unavoidable impurities, wherein the contents (at%) of Cu and Al satisfy the following relational expression: 0.48 ≤ Al/(Cu + Al) ≤ 0.70, and the relative density is 95% or more.
Inventors:
SATO YUSUKE (JP)
SATO TAKANORI (JP)
KAMINAGA KENGO (JP)
SATO TAKANORI (JP)
KAMINAGA KENGO (JP)
Application Number:
PCT/JP2022/038962
Publication Date:
August 31, 2023
Filing Date:
October 19, 2022
Export Citation:
Assignee:
JX METALS CORP (JP)
International Classes:
C23C14/34; B22F3/14; B22F9/08; C22C1/04; C22C9/01; C22C21/12
Domestic Patent References:
| WO2015151901A1 | 2015-10-08 |
Foreign References:
| JP2022006690A | 2022-01-13 | |||
| JP2019212892A | 2019-12-12 | |||
| JP2009188281A | 2009-08-20 | |||
| JP2004076080A | 2004-03-11 |
Other References:
NAKAMURA TAMOTSU, SHIGEKAZU TANAKA, KUNIO HAYAKAWA, HARUKI IMAIZUMI, MASAKI NISHIMURA, YASUHISA MURAKOSHI: "Pressure Sintering Characteristics with Chemical Reaction between Dissimilar Metal Powders by DC Pulse Resistance-Sintering Process", TRANSACTIONS OF THE JSME, vol. 67, no. 660, 25 February 2001 (2001-02-25), pages 298 - 305, XP093088026
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
Download PDF: