Title:
SOLID OXYGEN ION CONDUCTOR BASED FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/151122
Kind Code:
A1
Abstract:
The present disclosure provides a novel solid oxygen ion conductor based field effect transistor and a manufacturing method therefor. The field effect transistor comprises: a substrate; a gate dielectric layer, located on the substrate, the gate dielectric layer being a solid oxygen ion conductor film; a channel layer, covering a portion of the gate dielectric layer; and a source and a drain, respectively located on the gate dielectric layer which is not covered by the channel layer and on a portion of the channel layer.
Inventors:
CHEN XIANHUI (CN)
LEI BIN (CN)
MA DONGHUI (CN)
LIU SHIHAO (CN)
LEI BIN (CN)
MA DONGHUI (CN)
LIU SHIHAO (CN)
Application Number:
PCT/CN2021/071650
Publication Date:
July 21, 2022
Filing Date:
January 14, 2021
Export Citation:
Assignee:
UNIV SCIENCE & TECHNOLOGY CHINA (CN)
International Classes:
H01L49/00
Foreign References:
| CN105633280A | 2016-06-01 | |||
| CN101124679A | 2008-02-13 | |||
| CN106024901A | 2016-10-12 | |||
| US20060255392A1 | 2006-11-16 | |||
| CN201610585699A | 2016-07-22 |
Other References:
TSUCHIYA TAKASHI, TERABE KAZUYA, AONO MASAKAZU: "All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO 2 on SrTiO 3 single crystal", APPLIED PHYSICS LETTERS, 12 August 2013 (2013-08-12), pages 73110, XP055951490, DOI: 10.1063/1.4818736
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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