Title:
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE MANUFACTURING METHOD, AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/084910
Kind Code:
A1
Abstract:
According to the present invention, a first main surface has a central measurement region, a first measurement region, a second measurement region, a third measurement region, and a fourth measurement region. When viewed along a straight line perpendicular to the first main surface, the shortest distance between a first outer rim of the first main surface and the center of each of the first measurement region, the second measurement region, the third measurement region, and the fourth measurement region is 10 mm. The concentration of titanium in the central measurement region is defined as a first concentration, and the average of the concentrations of titanium in the first measurement region, the second measurement region, the third measurement region, and the fourth measurement region is defined as a second concentration. The first concentration is lower than the second concentration. The second concentration is 5×1014 atoms/cm3 or lower.
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Inventors:
SHIIHARA TAKAHIRO (JP)
Application Number:
PCT/JP2023/035140
Publication Date:
April 25, 2024
Filing Date:
September 27, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C23C16/42; C30B23/06; H01L21/20; H01L29/12; H01L29/78
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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