Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/075432
Kind Code:
A1
Abstract:
Provided is a method for producing a vertical silicon carbide semiconductor device that comprises electrodes on both main surfaces of a semiconductor chip (30) in which an epitaxial layer (2) and a n- type low-concentration buffer layer (20) have been epitaxially grown on a silicon carbide substrate (1). A defect that has extended from the silicon carbide substrate (1) to the epitaxial layer (2) and a defect that has occurred in the epitaxial layer (2) during epitaxial growth are detected with a PL image of the n- type low-concentration buffer layer (20). A defect that has occurred in the epitaxial layer (2) during epitaxial growth is detected with a PL image of the epitaxial layer (2). A defect that has extended from the silicon carbide substrate (1) to the epitaxial layer (2) is detected from the difference in detection results. A semiconductor chip (30) which does not have a defect that has extended from the silicon carbide substrate (1) to the epitaxial layer (2) is selected.
Inventors:
UCHIDA TAKAFUMI (JP)
Application Number:
PCT/JP2023/031087
Publication Date:
April 11, 2024
Filing Date:
August 29, 2023
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; G01N21/64; H01L21/336; H01L21/66; H01L29/12; H01L29/739
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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