SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/026803

A1

This silicon carbide semiconductor device comprises a silicon carbide substrate which has a first main surface and a second main surface that is on the reverse side of the first main surface, and an insulating layer which is in contact with the first main surface; the silicon carbide substrate has an active region and a terminal region that surrounds the active region when viewed in plan from a direction that is perpendicular to the first main surface; the insulating layer is provided with an opening through which a part of the active region is exposed; this silicon carbide semiconductor device additionally comprises an electrode which is formed on the insulating layer so as to be in contact with the first main surface through the opening; the insulating layer has a first portion which overlaps with the terminal region when viewed in plan and has a first thickness, a second portion which is connected to the first portion and overlaps with the electrode when viewed in plan, while having a second thickness, and a third portion which is connected to the second portion and overlaps with the electrode when viewed in plan, while having a third thickness; the third portion is provided with the opening; the second portion is positioned between the first portion and the third portion; and the second thickness is larger then the first thickness and the third thickness.

SAITOH YU (JP)

PCT/JP2022/029771

March 02, 2023

August 03, 2022

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SUMITOMO ELECTRIC INDUSTRIES (JP)

H01L29/78; H01L21/336; H01L29/06; H01L29/12

WO2018084020A1

2018-05-11

JP2003101039A	2003-04-04
JP2016162785A	2016-09-05
JP2014207444A	2014-10-30
JP2012227501A	2012-11-15

ITOH, Tadashige et al. (JP)

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