Title:
SILICON CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2024/078212
Kind Code:
A1
Abstract:
A silicon capacitor, comprising: a first electrode and a second electrode, which are arranged opposite each other, wherein the first electrode and the second electrode are both made of a silicon material; and a dielectric layer, which is arranged between the first electrode and the second electrode, wherein a metal layer is sandwiched between the dielectric layer and the first electrode and/or the second electrode, and the metal layer and the first electrode and/or the second electrode form ohmic contact. The stability of the silicon capacitor is improved.
Inventors:
FENG XIN (CN)
ZHANG YAOHUI (CN)
MO HAIFENG (CN)
ZHANG YAOHUI (CN)
MO HAIFENG (CN)
Application Number:
PCT/CN2023/117443
Publication Date:
April 18, 2024
Filing Date:
September 07, 2023
Export Citation:
Assignee:
SUZHOU WATECH ELECTRONICS CO LTD (CN)
International Classes:
H01L23/64; H10N97/00
Foreign References:
| CN116646341A | 2023-08-25 | |||
| KR19980022286A | 1998-07-06 | |||
| KR19980066720A | 1998-10-15 | |||
| CN1485900A | 2004-03-31 | |||
| JPH06334118A | 1994-12-02 |
Attorney, Agent or Firm:
IPFUTURE INTELLECTUAL PROPERTY OFFICE (CN)
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