Title:
SEMICONDUCTOR SUPER-JUNCTION POWER DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/083028
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application is a semiconductor super-junction power device, comprising: an n-type semiconductor layer (21); a plurality of columnar insulating layers (22) recessed in the n-type semiconductor layer (21); p-type doped regions (23) located in the n-type semiconductor layer (21) and located at side walls and bottom positions of the columnar insulating layers (22); p-type body regions (24) located in the n-type semiconductor layer (21) and located on two sides of each columnar insulating layer (22), wherein an n-type source region (25) is provided in each p-type body region (24); and gate structures adjacent to the p-type body regions (24), wherein each gate structure is configured to control the turning-on and turning-off of a current channel in a p-type body region (24). In the manufacturing method for a semiconductor super-junction power device of the present application, gate structures and p-type body regions (24) are manufactured first, a trench is then formed in an n-type semiconductor layer (21), ion implantation is then isotropically performed to form p-type doped regions (23), and an oxide layer is then filled to form columnar insulating layers (22).
Inventors:
WANG PENGFEI (CN)
YUAN YUANLIN (CN)
WANG RUI (CN)
LIU LEI (CN)
MIAO JINZHENG (CN)
YUAN YUANLIN (CN)
WANG RUI (CN)
LIU LEI (CN)
MIAO JINZHENG (CN)
Application Number:
PCT/CN2023/124284
Publication Date:
April 25, 2024
Filing Date:
October 12, 2023
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H01L29/06
Foreign References:
| US20020070418A1 | 2002-06-13 | |||
| CN213816164U | 2021-07-27 | |||
| CN103413763A | 2013-11-27 | |||
| CN107919398A | 2018-04-17 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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