Title:
SEMICONDUCTOR SUBSTRATE AND PROCESSING METHOD THEREFOR, AND SOLAR CELL AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/092989
Kind Code:
A1
Abstract:
The present application relates to the technical field of solar cells, and specifically provides a semiconductor substrate and a processing method therefor, and a solar cell and a preparation method therefor. The processing method for a semiconductor substrate comprises: forming a polished surface region and a textured surface region adjacent to the polished surface region on at least one surface of the semiconductor substrate, the area of the polished surface region being greater than or equal to that of the textured surface region. According to the present application, a polished surface region and a textured surface region adjacent to the polished surface region are formed on at least one surface of a semiconductor substrate, so that transparent conductive films are located and only located in the polished surface region; and a gate line is formed on the side of the corresponding transparent conductive film facing away from the semiconductor substrate, so that the photoelectric conversion efficiency of a solar cell can be improved.
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Inventors:
ZHOU XIWEI (CN)
ZHANG LIANG (CN)
ZHANG JING (CN)
ZHAO ZE (CN)
ZHANG LIANG (CN)
ZHANG JING (CN)
ZHAO ZE (CN)
Application Number:
PCT/CN2022/141509
Publication Date:
May 10, 2024
Filing Date:
December 23, 2022
Export Citation:
Assignee:
ANHUI HUASUN ENERGY CO LTD (CN)
International Classes:
H01L31/0236; H01L31/0224; H01L31/18
Foreign References:
| CN115548144A | 2022-12-30 | |||
| CN113421943A | 2021-09-21 | |||
| CN216624298U | 2022-05-27 | |||
| CN114497288A | 2022-05-13 | |||
| CN216624299U | 2022-05-27 | |||
| CN113328012A | 2021-08-31 | |||
| CN114843368A | 2022-08-02 | |||
| US20170077322A1 | 2017-03-16 | |||
| CN202211378975A | 2022-11-04 |
Attorney, Agent or Firm:
SUNSHINE INTELLECTUAL PROPERTY INTERNATIONAL CO., LTD. (CN)
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