Title:
SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS AND FILM THICKNESS IMPROVING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/231054
Kind Code:
A1
Abstract:
The present application relates to a semiconductor substrate processing apparatus and a film thickness improving method. The apparatus comprises reactors (200) and a common exhaust mechanism (300). There are at least two reactors (200). An exhaust pipe (240), a bearing platform (210), an airflow control ring (230) and a spray head (220) define a reaction chamber (250). The bottom end of the exhaust pipe (240) abuts against or is connected to an upper surface of the airflow control ring (230). An inner ring (241) is provided with a plurality of exhaust holes (2411) arranged at intervals. The exhaust holes (2411) are communicated with the reaction chamber (250). The common exhaust mechanism (300) is provided with an exhaust port (310). The reaction chamber (250) is communicated with the exhaust port (310) by means of the exhaust holes (2411). The aperture ratio of the exhaust holes (2411) of each area on the inner ring (241) has an increasing trend in a direction away from the exhaust port (310).
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Inventors:
LU JIABIN (CN)
Application Number:
PCT/CN2022/097276
Publication Date:
December 07, 2023
Filing Date:
June 07, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/205
Foreign References:
| CN112908821A | 2021-06-04 | |||
| CN104718602A | 2015-06-17 | |||
| CN105789015A | 2016-07-20 | |||
| US20040020601A1 | 2004-02-05 | |||
| CN105789014A | 2016-07-20 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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