Title:
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/189283
Kind Code:
A1
Abstract:
This semiconductor substrate comprises a main surface, a reference mark, and an epitaxial growth-inhibiting film. The reference mark is composed of a recess formed on the main surface, and serves as a reference for in-plane coordinates. The epitaxial growth-inhibiting film is provided in at least a part of the inside of the recess. At least two or more reference marks are provided on the main surface. The main surface is composed of a semiconductor material. The epitaxial growth-inhibiting film is composed of a material different from the semiconductor material.
Inventors:
SAKURADA TAKASHI (JP)
HISANABE HIDEYUKI (JP)
TAMASO HIDETO (JP)
FUKUSHIMA TAKERU (JP)
YOKOCHO TSUTAU (JP)
YAMAMOTO HIROFUMI (JP)
HISANABE HIDEYUKI (JP)
TAMASO HIDETO (JP)
FUKUSHIMA TAKERU (JP)
YOKOCHO TSUTAU (JP)
YAMAMOTO HIROFUMI (JP)
Application Number:
PCT/JP2023/008554
Publication Date:
October 05, 2023
Filing Date:
March 07, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/205; G03F9/00; H01L21/68
Foreign References:
| JP2015126110A | 2015-07-06 | |||
| JPH0462858A | 1992-02-27 | |||
| JPH01140624A | 1989-06-01 | |||
| JPH10312964A | 1998-11-24 | |||
| JPH07153669A | 1995-06-16 | |||
| JP2011135060A | 2011-07-07 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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