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Title:
SEMICONDUCTOR SUBSTRATE, APPARATUS AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/085213
Kind Code:
A1
Abstract:
The present invention comprises: a template substrate including a first seed region and a growth suppression region aligned in a first direction; and a first semiconductor part positioned above the template substrate. The first semiconductor part has a first base section positioned on the first seed region, and a first wing section that is connected to the first base section and that faces the growth suppression region with a first gap therebetween. The first wing section includes a wing edge positioned above the growth suppression region, and with regard to the first gap, the ratio of the width in the first direction to the thickness below the wing edge is 5.0 or more.

Inventors:
KAMIKAWA TAKESHI (JP)
AOKI YUTA (JP)
TAKEUCHI KAZUMA (JP)
MASAKI KATSUAKI (JP)
YAMASHITA FUMIO (JP)
Application Number:
PCT/JP2023/037822
Publication Date:
April 25, 2024
Filing Date:
October 19, 2023
Export Citation:
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Assignee:
KYOCERA CORP (JP)
International Classes:
H01L21/205
Domestic Patent References:
WO2021070910A12021-04-15
WO2022181686A12022-09-01
Foreign References:
JP2017535051A2017-11-24
JP2009239270A2009-10-15
JP2014150211A2014-08-21
US20080054292A12008-03-06
JP2002289539A2002-10-04
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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