Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/082363
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the technical field of semiconductors. Provided are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate, the direction perpendicular to a surface of the substrate being a first direction; a distribution layer, which is located in the substrate and comprises a capacitor region, wherein the distribution layer in the capacitor region comprises at least one electrically conductive structure, the electrically conductive structure comprises a plurality of first electrically conductive layers and a plurality of second electrically conductive layers, and the first electrically conductive layers and the second electrically conductive layers are alternately arranged spaced apart in a plane perpendicular to the first direction; a first capacitor electrode, which comprises at least the plurality of first electrically conductive layers in one electrically conductive structure; a second capacitor electrode, which comprises at least the plurality of second electrically conductive layers in one electrically conductive structure; and a dielectric layer, which is at least located in a gap between the first capacitor electrode and the second capacitor electrode that are adjacent to each other, wherein the first capacitor electrode, the second capacitor electrode and the dielectric layer form a capacitor structure. The embodiments of the present disclosure are at least conducive to increasing the depth of the capacitor structure in the first direction and increasing the capacitance of the capacitor structure.
Inventors:
LIU CHIH-CHENG (CN)
Application Number:
PCT/CN2022/131688
Publication Date:
April 25, 2024
Filing Date:
November 14, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/522
Foreign References:
| CN1953170A | 2007-04-25 | |||
| CN1779966A | 2006-05-31 | |||
| CN101276812A | 2008-10-01 | |||
| CN1215918A | 1999-05-05 | |||
| US20030082846A1 | 2003-05-01 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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