Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/026916
Kind Code:
A1
Abstract:
Disclosed in the embodiments of the present disclosure are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a source doped region, a drain doped region, and a lightly doped region and an intrinsic region, which are located between the source doped region and the drain doped region and are arranged adjacent to each other, wherein the lightly doped region is adjacent to the source doped region, and the intrinsic region is adjacent to the drain doped region; and the doping concentrations of the source doped region and the drain doped region are greater than the doping concentration of the lightly doped region.
Inventors:
TANG YI (CN)
XIAO JIANFENG (CN)
XIAO JIANFENG (CN)
Application Number:
PCT/CN2022/112042
Publication Date:
February 08, 2024
Filing Date:
August 12, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/08
Foreign References:
| CN103165611A | 2013-06-19 | |||
| CN110660852A | 2020-01-07 | |||
| CN110943129A | 2020-03-31 | |||
| US20050062053A1 | 2005-03-24 | |||
| CN202210925480A | 2022-08-03 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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