Title:
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF, AND OPERATION METHOD OF SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/055422
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor structure and a forming method thereof, and an operation method of the semiconductor structure. The semiconductor structure comprises: a substrate; a storage array comprising a plurality of storage units arranged in a first direction and a second direction, wherein each storage unit comprises an active pillar, and the active pillar comprises a first trench region and a second trench region arranged at intervals in a third direction; a word line structure comprising a first word line extending in the first direction and a second word line extending in the second direction, wherein the first word line covers the first trench regions of the active pillars of the plurality of storage units arranged at intervals in the first direction, and the second word line covers the second trench regions of the active pillars of the plurality of storage units arranged at intervals in the second direction; and a common bit line electrically connected to all of the storage units in the storage array. The present disclosure simplifies the manufacturing process of a bit line, improves the electrical performance of a semiconductor structure, and facilitates reducing the size of the semiconductor structure.
Inventors:
ADACHI TAKAO (CN)
WANG XIAOGUANG (CN)
XIAO DEYUAN (CN)
PARK SOONBYUNG (CN)
WANG XIAOGUANG (CN)
XIAO DEYUAN (CN)
PARK SOONBYUNG (CN)
Application Number:
PCT/CN2022/133651
Publication Date:
March 21, 2024
Filing Date:
November 23, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/06; H01L29/10
Foreign References:
| CN113903735A | 2022-01-07 | |||
| CN112466892A | 2021-03-09 | |||
| CN115020410A | 2022-09-06 | |||
| CN112397645A | 2021-02-23 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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