SEMICONDUCTOR LIGHT-RECEIVING ELEMENT

WIPO Patent Application WO/2023/218698

A1

A semiconductor light-receiving element equipped with a surface (1a) on which light is incident, a first semiconductor layer (21) of a first conductive type, a second semiconductor layer (22) of the first conductive type which has greater bandgap energy than does the first semiconductor layer (21) and is layered on the first semiconductor layer (21) on the surface (1a) side of the first semiconductor layer (21), a doping region (30) which has a second conductive type different from the first conductive type and is formed so as to extend from the surface (1a) toward the second semiconductor layer (22) side so as to at least reach the interior of the second semiconductor layer (22), wherein: the thickness (T22) of the second semiconductor layer (22) in a first direction (Z) which intersects said surface (1a) is less than the thickness of the first semiconductor layer (21) in the first direction (Z); the doping region (30) includes a plurality of sections (31) which face one another with a gap (30g) interposed therebetween when viewed from the first direction (Z); and the width (G30) of the gap (30g) is greater than the thickness (T22) of the second semiconductor layer (22) in the first direction (Z).

TAGUCHI KEIKI (JP)
ISHIHARA HAJIME (JP)

PCT/JP2023/001523

November 16, 2023

January 19, 2023

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HAMAMATSU PHOTONICS KK (JP)

H01L31/10

JP2010056147A	2010-03-11
JP2001177142A	2001-06-29
JP2009206499A	2009-09-10
JP2012060077A	2012-03-22
JP2014110380A	2014-06-12
US20120043584A1	2012-02-23

HASEGAWA Yoshiki et al. (JP)

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