Title:
SEMICONDUCTOR FABRICATION DEVICE AND METHOD
Document Type and Number:
WIPO Patent Application WO/2024/082898
Kind Code:
A1
Abstract:
A semiconductor fabrication device and method. The semiconductor fabrication device comprises a vacuum reaction chamber and a controller; a reaction gas spraying assembly, a reaction platform and a film thickness monitoring assembly are disposed in the vacuum reaction chamber. The controller can acquire growth film thickness distribution information of an epitaxial substrate on the reaction platform measured by the film thickness monitoring assembly, and controls the spraying assembly to regulate and control the distribution of the reaction gas in the vacuum reaction chamber. In the spraying assembly, a plurality of gas-regulating holes are distributed on the side of a spraying housing facing the reaction platform. An adjusting assembly comprises a mounting plate, an array driving circuit and a plurality of gas micro-control devices. The mounting plate is provided with a plurality of mounting holes. The gas micro-control devices are arranged at the mounting holes. The gas micro-control devices can be controlled by the array driving circuit to regulate and control the air outlet area of the mounting holes. The mounting holes communicate with a spraying chamber and the gas-regulating holes.
Inventors:
LIANG JIAN (CN)
ZHANG ZHENGJIE (CN)
WANG ZHIWEI (CN)
ZHANG ZHENGJIE (CN)
WANG ZHIWEI (CN)
Application Number:
PCT/CN2023/119359
Publication Date:
April 25, 2024
Filing Date:
September 18, 2023
Export Citation:
Assignee:
SUZHOU LEKIN SEMICONDUCTOR CO LTD (CN)
GUSU LABORATORY OF MAT (CN)
GUSU LABORATORY OF MAT (CN)
International Classes:
C30B25/02; C30B25/16; H01L21/205; H01L21/67
Foreign References:
| CN115341274A | 2022-11-15 | |||
| CN103184432A | 2013-07-03 | |||
| CN108117272A | 2018-06-05 | |||
| JP2010034474A | 2010-02-12 |
Attorney, Agent or Firm:
NANJING LI & FENG INTELLECTUAL PROPERTY AGENCY (SPECIAL GENERAL PARTNERSHIP) (CN)
Download PDF: