Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/090117
Kind Code:
A1
Abstract:
A semiconductor substrate (11) comprises an FS layer (13) between a collector layer (12) and a drift layer (14). A total dose amount of the collector layer (12) is less than 1×1013/cm2. The collector layer (12) has a plurality of peaks of the carrier concentration. At least a portion of the collector layer (12) is configured so that a dose amount thereof included in ±3σp with respect to the deepest portion peak, which is a peak at the deepest position relative to the rear surface (11b) of the semiconductor substrate (11), accounts for 13% or more of the total dose amount.
Inventors:
SUGIURA HIROTO (JP)
MIYATA MASANORI (JP)
OKAWARA JUN (JP)
MIYATA MASANORI (JP)
OKAWARA JUN (JP)
Application Number:
PCT/JP2023/035323
Publication Date:
May 02, 2024
Filing Date:
September 28, 2023
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L29/739
Domestic Patent References:
| WO2016204126A1 | 2016-12-22 |
Foreign References:
| JP2022136627A | 2022-09-21 | |||
| JP2006173297A | 2006-06-29 | |||
| JP2020043301A | 2020-03-19 | |||
| JP2015023118A | 2015-02-02 |
Attorney, Agent or Firm:
YAHAGI Kazuyuki et al. (JP)
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