Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/074141
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device capable of inhibiting switching element loss during high temperatures without increasing the radiation noise of the switching element. This semiconductor device (2a) comprises: an IGBT (21) having a gate (G) to which a gate signal is input; a temperature detection element (23) that detects the temperature of the IGBT (21); and a capacitance adjustment unit (11) that is disposed between the gate (G) of the IGBT (21) and a reference potential terminal (41), and adjusts the capacitance between the gate (G) and an emitter (E) of the IGBT (21) in accordance with the detected temperature detected by the temperature detection element (23).
Inventors:
KUMAZAWA YUUKI (JP)
Application Number:
PCT/JP2022/033784
Publication Date:
May 04, 2023
Filing Date:
September 08, 2022
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H03K17/16; H02M1/08; H03K17/567; H03K17/695
Domestic Patent References:
| WO2021192035A1 | 2021-09-30 |
Foreign References:
| US20180138902A1 | 2018-05-17 | |||
| JP2014138537A | 2014-07-28 | |||
| JPH10313570A | 1998-11-24 |
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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