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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/172625
Kind Code:
A1
Abstract:
A semiconductor device (1) includes a third active region (130) in which both ends of the fingers of a plurality of isolated FETs (11, 12) are connected. A third nitride-semiconductor layer (131) containing a P-type impurity is provided above the third active region (130).

Inventors:
YAMAGIWA HIROTO
YANAGIHARA MANABU
SATO TAKAHIRO
HIKITA MASAHIRO
Application Number:
PCT/JP2021/048123
Publication Date:
August 18, 2022
Filing Date:
December 24, 2021
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Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L21/336; H01L21/337; H01L21/338; H01L21/822; H01L21/8234; H01L27/04; H01L27/088; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
WO2014041731A12014-03-20
Foreign References:
JP2012064900A2012-03-29
JP2018186142A2018-11-22
JP2009111016A2009-05-21
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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