Title:
SEMICONDUCTOR DEVICE AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/084366
Kind Code:
A1
Abstract:
Provided is a semiconductor device that enables miniaturization or higher integration. Provided is an oxide semiconductor suitable for the semiconductor device. Formed is an oxide semiconductor that has a small difference in thickness between a section provided along a first surface and a section provided along a second surface which is inclined relative to the first surface. A precursor having an aluminum content of 0.01 ppm to 500 ppm is used to deposit a layer, by automatic layer deposition (ALD), on an oxide semiconductor having an aluminum concentration of 0.01 atom percent to 10 atom percent. Furthermore, the crystallinity of the oxide semiconductor is improved by performing impurity removal processing such as microwave processing.
Inventors:
ISAKA FUMITO (JP)
EGI YUJI (JP)
OHNO TOSHIKAZU (JP)
OKUNO NAOKI (JP)
TAKAHASHI HIRONOBU (JP)
KUNITAKE HITOSHI (JP)
KAKEHATA TETSUYA (JP)
EGI YUJI (JP)
OHNO TOSHIKAZU (JP)
OKUNO NAOKI (JP)
TAKAHASHI HIRONOBU (JP)
KUNITAKE HITOSHI (JP)
KAKEHATA TETSUYA (JP)
Application Number:
PCT/IB2023/060395
Publication Date:
April 25, 2024
Filing Date:
October 16, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/205; H01L21/268; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/788; H01L29/792; H10B12/00; H10B53/30
Domestic Patent References:
| WO2021171136A1 | 2021-09-02 | |||
| WO2021140407A1 | 2021-07-15 | |||
| WO2019234561A1 | 2019-12-12 |
Foreign References:
| US20220189957A1 | 2022-06-16 | |||
| JP2019134077A | 2019-08-08 | |||
| JP2016149552A | 2016-08-18 | |||
| JP2016146422A | 2016-08-12 | |||
| JP2015073039A | 2015-04-16 | |||
| JP2013165260A | 2013-08-22 |
Download PDF:
Previous Patent: DOCUMENT SEARCH METHOD AND DOCUMENT SEARCH SYSTEM
Next Patent: BATTERY AND METHOD FOR PRODUCING BATTERY
Next Patent: BATTERY AND METHOD FOR PRODUCING BATTERY