Title:
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/055885
Kind Code:
A1
Abstract:
Provided in the present application are a semiconductor device and a preparation method therefor, which realize ohmic contact between a first electrode layer and an epitaxial layer, reduce the contact resistivity of ohmic contact, are conducive to reducing the on-resistance of the semiconductor device, and thus decrease the power loss of the semiconductor device. The semiconductor device may comprise an epitaxial layer, a doped layer, a dielectric layer and a first electrode layer, wherein the epitaxial layer and the dielectric layer are stacked. The semiconductor device is provided with a first recess, wherein one part of the doped layer and one part of the first electrode layer can be stacked inside the first recess.
Inventors:
SU SHUAI (CN)
HE LINFENG (CN)
WEI WEI (CN)
ZHANG YAWEN (CN)
WU LONG (CN)
HOU MINGCHEN (CN)
FENG PENG (CN)
HAN MINGTAO (CN)
LI HAOTIAN (CN)
ZHOU RUI (CN)
HE LINFENG (CN)
WEI WEI (CN)
ZHANG YAWEN (CN)
WU LONG (CN)
HOU MINGCHEN (CN)
FENG PENG (CN)
HAN MINGTAO (CN)
LI HAOTIAN (CN)
ZHOU RUI (CN)
Application Number:
PCT/CN2023/117298
Publication Date:
March 21, 2024
Filing Date:
September 06, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/45; H01L21/324; H01L21/335; H01L29/778
Foreign References:
| US20080128753A1 | 2008-06-05 | |||
| JP2008118044A | 2008-05-22 | |||
| US20070284653A1 | 2007-12-13 | |||
| US20060226442A1 | 2006-10-12 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
Download PDF: