Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/018612
Kind Code:
A1
Abstract:
This semiconductor device includes: a gate voltage control circuit that applies on-bias and off-bias to a gate terminal of a power semiconductor element in accordance with a first drive signal; and an off-bias voltage control circuit that changes a voltage level of the off-bias in accordance with the first drive signal and a second drive signal and controls an application period of the changed off-bias.
Inventors:
YAMAMOTO SHOTARO (JP)
WADA YUKIHIKO (JP)
TAMADA YOSHIKO (JP)
MOROKUMA KENICHI (JP)
MARUYAMA TOMOKAZU (JP)
IKEJIRI AYAKI (JP)
WADA YUKIHIKO (JP)
TAMADA YOSHIKO (JP)
MOROKUMA KENICHI (JP)
MARUYAMA TOMOKAZU (JP)
IKEJIRI AYAKI (JP)
Application Number:
PCT/JP2022/028435
Publication Date:
January 25, 2024
Filing Date:
July 22, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H02M1/08
Foreign References:
| JP2020182334A | 2020-11-05 | |||
| JP2004015974A | 2004-01-15 | |||
| JP2015012624A | 2015-01-19 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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