Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/181493
Kind Code:
A1
Abstract:
Provided is a semiconductor device having an inverter circuit consisting of upper and lower arms in which short-circuit current detection accuracy can be improved by increasing the inductance of a circuit for detecting the rate of change (di/dt) of the main current with time without increasing the inductance of the main circuit. The semiconductor device is characterized by comprising: an upper arm switching element having a gate, a first main electrode, and a second main electrode serving as a gate reference potential; a positive electrode terminal which is an external electrode electrically connected to the first main electrode and through which a main current flows; a first auxiliary terminal which is an external electrode electrically connected to the second main electrode and can detect the potential of the second main electrode and through which the main current does not flow; and a second auxiliary terminal which is an external electrode electrically connected to an AC terminal and arranged close to the positive electrode terminal and through which the magnetically coupled main current does not flow.
Inventors:
MIMA AKIRA (JP)
ARAI TAIGA (JP)
KONNO AKITOYO (JP)
SAITO KATSUAKI (JP)
ARAI TAIGA (JP)
KONNO AKITOYO (JP)
SAITO KATSUAKI (JP)
Application Number:
PCT/JP2022/042988
Publication Date:
September 28, 2023
Filing Date:
November 21, 2022
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H02M7/48; H01L25/07; H01L25/18; H02M1/08
Foreign References:
| JP2014120563A | 2014-06-30 | |||
| JP2016066974A | 2016-04-28 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
Download PDF: