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Title:
SEMICONDUCTOR DEVICE AND ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/152879
Kind Code:
A1
Abstract:
Provided is an etching method that can ameliorate defects caused by etching when processing contact holes in a semiconductor device. The etching method comprises: bonding a first polymer film onto an insulation film by using plasma of a first gas, the insulation film being provided on a semiconductor layer that contains silicon; forming an altered layer by oxidizing the upper surface of the insulation film simultaneously with the removal of the first polymer film, using plasma of a second gas; bonding a second polymer film onto the altered layer by using plasma of a third gas; and removing the second polymer film and the altered layer by using plasma of a fourth gas.

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Inventors:
HIRATA AKIKO (JP)
FUKASAWA MASANAGA (JP)
Application Number:
PCT/JP2020/023359
Publication Date:
August 05, 2021
Filing Date:
June 15, 2020
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/3065
Foreign References:
JP2000243749A2000-09-08
JP2000183040A2000-06-30
JP2014170764A2014-09-18
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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