Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2022/029532
Kind Code:
A1
Abstract:
Provided is a semiconductor device having high computing power. A semiconductor device using the translinear principle, the semiconductor device having: first to tenth transistors each including a channel formation region that has a metal oxide; and a first capacitative element. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor. A first terminal of the third transistor is electrically connected to a second terminal of the second transistor via the first capacitative element, and a gate of the second transistor. The second terminal of the second transistor is electrically connected to first terminals of the fourth and seventh transistors, and gates of the fifth and eighth transistors. A gate of the seventh transistor is electrically connected to first terminals of the fifth and sixth transistors. A gate of the tenth transistor is electrically connected to first terminals of the eighth and ninth transistors.
Inventors:
IKEDA TAKAYUKI (JP)
NAGATSUKA SHUHEI
NAGATSUKA SHUHEI
Application Number:
PCT/IB2021/056484
Publication Date:
February 10, 2022
Filing Date:
July 19, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G06G7/14; G06G7/16; G06G7/60; G06N3/063; H01L21/82; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786
Domestic Patent References:
| WO2018234919A1 | 2018-12-27 |
Foreign References:
| JP2018025759A | 2018-02-15 | |||
| JPH06131482A | 1994-05-13 |
Download PDF: