RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD

WIPO Patent Application WO/2021/135924

A1

Disclosed are a resistive random access memory and a manufacturing method. A memory area of the resistive random access memory comprises a first metal interconnection line, a resistive random access memory unit and a second metal interconnection line that are connected in sequence, wherein the whole or part of a bottom electrode of the resistive random access memory unit is arranged in a short through hole of a barrier layer on the first metal interconnection line; the first metal interconnection line is connected to the bottom electrode of the resistive random access memory unit; and the second metal interconnection line is connected to a top electrode of the resistive random access memory unit. By means of arranging the whole or part of the bottom electrode of the resistive random access memory unit in the short through hole of the barrier layer on the first metal interconnection line, the bottom electrode can be made to be very thin, such that the height of the resistive random access memory unit in a CMOS back end of line is reduced, the thickness, which needs to be occupied, of each layer in the CMOS back end of line is smaller, integration is facilitated, the back end of line of a logic circuit area cannot be influenced, and the total stacking thickness can meet the electrical property requirement of the resistive random access memory. The process integration scheme in the embodiments of the present application can make the integration of an RRAM and a standard CMOS simpler.

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XIAO HAN (CN)
WANG ZONGWEI (CN)
HUANG RU (CN)

PCT/CN2020/136467

July 08, 2021

December 15, 2020

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HANGZHOU WEIMING XINKE TECH CO LTD (CN)
ADVANCED INSTITUTE OF INFORMATION TECHNOLOGY AIIT PEKING UNIV (CN)

H01L45/00

CN111081872A	2020-04-28
CN111384081A	2020-07-07
CN106611768A	2017-05-03
CN105047682A	2015-11-11
CN109411602A	2019-03-01
US20140166961A1	2014-06-19
US20190371999A1	2019-12-05

BEIJING CHENQUAN INTELLECTUAL PROPERTY LAW FIRM (CN)

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