Title:
RESISTANCE RANDOM ACCESS MEMORY UNIT, RESISTANCE RANDOM ACCESS MEMORY, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/039847
Kind Code:
A1
Abstract:
A resistance random access memory unit 300, a resistance random access memory, and an electronic device. The resistance random access memory unit 300 comprises a bottom electrode 301, a top electrode 304, and a resistance random material layer 303 located between the top electrode 304 and the bottom electrode 301. In addition, a conductive layer 302 is further provided and is located between the bottom electrode 301 and the top electrode 304, and a plurality of localized areas are formed in a plane of the conductive layer 302. A conductive filament forming position can be anchored by means of the conductive layer 302. In such a resistance random access memory, inconsistency between periods can be mitigated, and inconsistency between devices can also be mitigated.
Inventors:
QIN QING (CN)
LI TAN (CN)
ZHOU XUE (CN)
JIAO HUIFANG (CN)
LI TAN (CN)
ZHOU XUE (CN)
JIAO HUIFANG (CN)
Application Number:
PCT/CN2021/119117
Publication Date:
March 23, 2023
Filing Date:
September 17, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L45/00
Foreign References:
| CN102227014A | 2011-10-26 | |||
| CN111384239A | 2020-07-07 | |||
| US20130320284A1 | 2013-12-05 | |||
| CN103515534A | 2014-01-15 | |||
| CN104409627A | 2015-03-11 | |||
| CN103035838A | 2013-04-10 |
Attorney, Agent or Firm:
KING & WOOD MALLESONS (CN)
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