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Title:
REMOVAL METHOD FOR LAMINATED MATERIAL ON INTERMEDIATE WASTE SILICON WAFER SURFACE
Document Type and Number:
WIPO Patent Application WO/2023/074819
Kind Code:
A1
Abstract:
[Problem] To provide a removal method that makes it possible to remove laminated material from a silicon wafer surface very efficiently and inexpensively with a simple device, without negative effects on the environment and without causing major damage to the silicon wafer that is the base material. [Solution] Blasting was performed by using a blasting device (of the dry type, which sprays a dry abrasive, and of the gravity type, which sprays, with compressed air, abrasive that has fallen from an abrasive tank due to gravity) to spray boron carbide (B4C), which is an abrasive, of grain size of #220 onto the lamination surface of laminated material on an intermediate waste silicon wafer for five seconds, with a spray distance of 120 mm, and a spray pressure 0.2 MPa.

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Inventors:
SUN YONGSHENG (JP)
Application Number:
PCT/JP2022/040233
Publication Date:
May 04, 2023
Filing Date:
October 27, 2022
Export Citation:
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Assignee:
NANOLUB CO LTD (JP)
KEITECH CO LTD (JP)
International Classes:
B24C11/00; B24C1/00; B24C5/02; B24C9/00; H01L21/304
Foreign References:
JP2001162535A2001-06-19
JP3231888U2021-05-06
JP2006305694A2006-11-09
JP2012121108A2012-06-28
Attorney, Agent or Firm:
INOUE Hironari (JP)
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