Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/045029
Kind Code:
A1
Abstract:
Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern. The reflective mask blank comprises a substrate, a multi-layer reflective film disposed on the substrate, and an absorbent body film disposed on the multi-layer reflective film, and is characterized in that: the absorbent body film includes, in at least a part thereof, at least one element with a high absorption coefficient, chosen from the group consisting of cobalt (Co) and nickel (Ni), and an element that increases the speed of dry etching; the absorbent body film includes a lower-surface region that includes a surface on the substrate side and an upper-surface region that includes a surface on the side opposite the substrate; and the concentration (atomic percentage) of the element with the high absorption coefficient in the upper-surface region is greater than the concentration (atomic percentage) of the element with the high absorption coefficient in the lower-surface region.
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Inventors:
KATAOKA MIZUKI (JP)
IKEBE YOHEI (JP)
IKEBE YOHEI (JP)
Application Number:
PCT/JP2019/031361
Publication Date:
March 05, 2020
Filing Date:
August 08, 2019
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; G03F1/54
Domestic Patent References:
| WO2018074512A1 | 2018-04-26 | |||
| WO2018135468A1 | 2018-07-26 |
Foreign References:
| US20160223896A1 | 2016-08-04 | |||
| JP2008535270A | 2008-08-28 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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